Cooled infrared detectors generate electrical signals by absorbing infrared radiation. Their detection elements are special semiconductor materials, such as mercury oxide, indium antimonide indium, etc. When infrared radiation irradiates the detection element, it will excite the carriers in the detection element, thereby generating electrical signals. However, since the lifetime of the carriers is very short, in order to ensure the sensitivity and response speed of the detector, the detection element needs to be cooled to a low temperature, usually 77K. This cooling technology usually adopts the method of refrigerant cooling, such as liquid nitrogen and refrigerators, etc.
Uncooled infrared detectors generate electrical signals by absorbing infrared radiation. Their detection elements are usually semiconductor materials, such as silicon and germanium, etc. When infrared radiation irradiates the detection element, it will excite the carriers in the detection element, thereby generating electrical signals. Since the resistance of the detection element changes with temperature, the detection of infrared radiation can be achieved by measuring the resistance of the detection element.
